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unisonic technologies co., ltd 1n70 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2008 unisonic technologies co., ltd qw-r502-171,a 1.2 amps, 700 volts n-channel mosfet ? description the utc 1n70 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) =11.5 ? @v gs = 10v. * ultra low gate charge (typical 5.0nc) * low reverse transfer capacitance (c rss = typical 3.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain *pb-free plating product number: 1n70l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing 1N70-T92-B 1n70l-t92-b to-92 g d s tape box 1n70-t92-k 1n70l-t92-k to-92 g d s bulk
1n70 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-171,a ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v avalanche current (note 1) i ar 1.2 a continuous drain current i d 1.2 a pulsed drain current (note 1) i dm 4.8 a single pulsed (note 2) e as 50 mj avalanche energy repetitive (note 1) e ar 4.0 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns power dissipation p d 3 w junction temperature t j +150
operating temperature t opr -55 ~ +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction-to-ambient ja 79
/w junction-to-case jc 29
/w
1n70 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-171,a ? electrical characteristics (t c =25 , unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250a 700 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a forward v gs = 30v, v ds = 0v 100 na gate-source leakage current reverse i gss v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient ? bv dss /t ? j i d = 250a 0.4 v/
on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 0.6a 9.3 11.5 ? dynamic characteristics input capacitance c iss 120 150 pf output capacitance c oss 20 25 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 3.0 4.0 pf switching characteristics turn-on delay time t d(on) 5 20 ns turn-on rise time t r 25 60 ns turn-off delay time t d(off) 7 25 ns turn-off fall time t f v dd =300v, i d =1.2a, r g =50 ? (note 4,5) 25 60 ns total gate charge q g 5.0 6.0 nc gate-source charge q gs 1.0 nc gate-drain charge q gd v ds =480v, v gs =10v, i d =1.2a (note 4,5) 2.6 nc source-drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v, i s = 1.2a 1.4 v maximum continuous drain-source diode forward current i s 1.2 a maximum pulsed drain-source diode forward current i sm 4.8 a reverse recovery time t rr 160 ns reverse recovery charge q rr v gs =0v, i s = 1.2a di f /dt = 100a/s (note1) 0.3 c note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 60mh, i as = 1a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 1.2a, di/dt 200a/s, v dd bv dss , starting t j = 25c 4. pulse test: pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature
1n70 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-171,a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
1n70 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-171,a ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
1n70 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-171,a ? typical characteristics 10 0 10 -1 10 1 10 -1 10 0 drain-source voltage, v ds (v) output characteristics 250 ? s pulse test t c =25 10 -2 v gs top: 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v bottorm:5.5v 10 0 10 -1 2 gate-source voltage, v gs (v) transfer characteristics 46 810 -40 125 25 v ds =50v 250 ? s pulse test 0 0.0 drain-source on-resistance, r ds(on) ( ? ) drain current, i d (a) 0.5 1.0 2.5 v gs =10v t j =25 v gs =20v 1.5 2.0 5 10 15 25 30 on-resistance vs. drain current 20 10 0 10 -1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) source- drain diode forward voltage 1.6 25 0.4 0.6 0.8 1.0 1.2 1.4 125 v gs =0v 250 ? s pulse test capacitance (pf) gate-source voltage, v gs (v)
1n70 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-171,a ? typical characteristics(cont.) drain-source breakdown voltage, bv dss, (normalized) (v) drain-source on-resistance, r ds(on) (normalized) ( ? ) 10 1 10 -1 10 -2 drain-source voltage, v ds (v) drain current, i d (a) max. safe operating area 10 2 1ms 10 1 10 0 100 ? s 10ms dc 10 0 10 3 operation in this area is limited by r ds(on) t c =25 t j =150 single pulse drain current, i d (a) case temperature, t c ( ) 75 100 150 1.2 max. drain current vs. case temperature 0.0 125 50 25 0.9 0.6 0.3 thermal response, jc (t)
1n70 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-171,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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